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Infineon BSC019N06NSATMA1RoHS

Manufacturer
Infineon
MPN
BSC019N06NSATMA1
LCSC Part #
C6471340
Packaging
TDSON-8FL
Customer #
Key Attributes
MOSFET N-CH 60V 192A TDSON-8FL
Datasheetpdf iconInfineon BSC019N06NSATMA1
In-Stock: 70
70 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8341$ 1.83
10+$ 1.5439$ 15.44
30+$ 1.3613$ 40.84
100+$ 1.1739$ 117.39
500+$ 1.0907$ 545.35
1,000+$ 1.0532$ 1053.20
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTDSON-8FL
Drain to Source Voltage60V
Current - Continuous Drain(Id)192A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)1.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.25nF
Gate Charge(Qg)77nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

450 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 2110 MHz to 2170 MHz.

Features

AI Translation
  • Optimized for synchronous rectification
  • 175 °C rated
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • Higher solder joint reliability due to enlarged source interconnection

Applications

AI Translation
  • RF power amplifier for base station and multi-carrier applications in the 2110 MHz to 2170 MHz frequency range