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Infineon BAT1504WH2110XTSA1 product image
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Infineon BAT1504WH2110XTSA1RoHS

Manufacturer
MPN
BAT1504WH2110XTSA1
LCSC Part #
C6469819
Packaging
SOT-323-3
Customer #
Key Attributes
1 Pair Series Connection 110mA 410mV@10mA 4V SOT-323-3 RF Diodes RoHS
Datasheetpdf iconInfineon BAT1504WH2110XTSA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerInfineon
PackagingSOT-323-3
Non-Repetitive Peak Forward Surge Current-
Diode Configuration1 Pair Series Connection
Current - Rectified110mA
Reverse Leakage Current (Ir)5uA@1V
Operating Junction Temperature Range-55℃~+150℃
Voltage - Forward(Vf@If)410mV@10mA
DC Reverse Voltage(Vr)4V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Features

AI Translation
  • Low inductance LS = 1.4 nH (typical)
  • Low capacitance C = 0.3 pF (typical) at 1 MHz
  • Industry standard SOT323-3 package (2 mm x 2.1 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

Applications

AI Translation
  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.5229$ 0.52
200+$ 0.2092$ 41.84
500+$ 0.2016$ 100.80
1,000+$ 0.1986$ 198.60
Standard Packaging3000/Full Reel
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