JSMSEMI AOD407
| Manufacturer | JSMSEMIAsian Brands |
| MPN | AOD407 |
| LCSC Part # | C6396162 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 20A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 68mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 9.86nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-60V, ID=-20A, RDS(ON)<68mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- High-speed switching applications
- Analog switch applications
In-Stock: 48,175
48,175 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.194$ 0.1649 | $ 0.82 |
| 50+ | $ 0.169$ 0.1437 | $ 7.19 |
| 150+ | $ 0.1583$ 0.1346 | $ 20.19 |
| 500+ | $ 0.145$ 0.1233 | $ 61.65 |
| 2,500+ | $ 0.1391$ 0.1183 | $ 295.75 |
| 5,000+ | $ 0.1355$ 0.1152 | $ 576.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 68mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 9.86nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-60V, ID=-20A, RDS(ON)<68mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Applications
AI Translation
- High-speed switching applications
- Analog switch applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



