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JSMSEMI FDD6670A-NLRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDD6670A-NL
LCSC Part #
C6396154
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 80A TO-252
Datasheetpdf iconJSMSEMI FDD6670A-NL
In-Stock: 75
75 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2755$ 0.2342$ 1.17
50+$ 0.2183$ 0.1856$ 9.28
150+$ 0.1937$ 0.1647$ 24.71
500+$ 0.1631$ 0.1387$ 69.35
2,500+$ 0.1495$ 0.1271$ 317.75
5,000+$ 0.1413$ 0.1202$ 601.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-252
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)215pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.614nF
Gate Charge(Qg)33.7nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 30V, ID = 80A, RDS(ON) < 6 mΩ @ VGS = 10 V
  • Low gate charge
  • Green device available
  • Advanced high cell denity trench technology for ultra Iow RDS(ON)
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Networking
  • Load Switch
  • LED Applications