LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
72% OFF
MICROCHIP TN0104N3-G product image
  • TN0104N3-G thumbnail 1
  • TN0104N3-G thumbnail 2
  • TN0104N3-G thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

MICROCHIP TN0104N3-GRoHS

Manufacturer
MPN
TN0104N3-G
LCSC Part #
C632577
Packaging
TO-92
Customer #
Key Attributes
MOSFET N-CH 40V 450mA TO-92
Datasheetpdf iconMICROCHIP TN0104N3-G
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.8383$ 0.7948$ 0.79
10+$ 2.4252$ 0.6791$ 6.79
30+$ 2.1666$ 0.6067$ 18.20
100+$ 1.9034$ 0.5330$ 53.30
500+$ 1.7841$ 0.4996$ 249.80
1,000+$ 1.7321$ 0.4850$ 485.00
Standard Packaging1000/Full Bag
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingTO-92
Drain to Source Voltage40V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)450mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)70pF
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The TN0104 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

AI Translation
  • 1.6V Maximum Low Threshold
  • High Input Impedance
  • Low Input Capacitance
  • Fast Switching Speeds
  • Low On-Resistance
  • Free from Secondary Breakdown
  • Low Input and Output Leakage

Applications

AI Translation
  • Logic-Level Interfaces (Ideal for TTL and CMOS)
  • Solid-State Relays
  • Battery-Operated Systems
  • Photovoltaic Drives
  • Analog Switches
  • General Purpose Line Drivers
  • Telecommunication Switches