MICROCHIP TN0104N3-G
| Manufacturer | |
| MPN | TN0104N3-G |
| LCSC Part # | C632577 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 450mA TO-92 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 450mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Vgs | ±20V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The TN0104 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- 1.6V Maximum Low Threshold
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Solid-State Relays
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8383$ 0.7948 | $ 0.79 |
| 10+ | $ 2.4252$ 0.6791 | $ 6.79 |
| 30+ | $ 2.1666$ 0.6067 | $ 18.20 |
| 100+ | $ 1.9034$ 0.5330 | $ 53.30 |
| 500+ | $ 1.7841$ 0.4996 | $ 249.80 |
| 1,000+ | $ 1.7321$ 0.4850 | $ 485.00 |
Standard Packaging1000/Full Bag | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 450mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Vgs | ±20V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The TN0104 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- 1.6V Maximum Low Threshold
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Solid-State Relays
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



