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VISHAY SIR186DP-T1-RE3 product image
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VISHAY SIR186DP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIR186DP-T1-RE3
LCSC Part #
C6296755
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 60V 60A PowerPAKSO-8
Datasheetpdf iconVISHAY SIR186DP-T1-RE3

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation5W
RDS(on)7.8mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.71nF
Gate Charge(Qg)37nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100 % Rg and UIS tested
  • RoHS COMPLIANT HALOGEN FREE

Applications

AI Translation
  • Synchronous rectification
  • Primary side switch
  • DC/DC converter
  • Motor drive switch
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9505$ 0.95
10+$ 0.9291$ 9.29
30+$ 0.9153$ 27.46
100+$ 0.9016$ 90.16
Standard Packaging3000/Full Reel
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