HXY MOSFET BSS84LT1G-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | BSS84LT1G-HXY |
| LCSC Part # | C6285750 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 50V 0.13A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 100mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
BSS84LT1G utilizes advanced trench technology and design to achieve excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -50V, ID = -0.13A
- RDS(ON) < 5Ω at VGS = -10V
- RDS(ON) < 6Ω at VGS = -4.5V
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- DC-DC converters
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0205 | $ 1.03 |
| 500+ | $ 0.0161 | $ 8.05 |
| 3,000+ | $ 0.0131 | $ 39.30 |
| 6,000+ | $ 0.0116 | $ 69.60 |
| 24,000+ | $ 0.0104 | $ 249.60 |
| 51,000+ | $ 0.0097 | $ 494.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 100mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
BSS84LT1G utilizes advanced trench technology and design to achieve excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -50V, ID = -0.13A
- RDS(ON) < 5Ω at VGS = -10V
- RDS(ON) < 6Ω at VGS = -4.5V
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- DC-DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



