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HXY MOSFET DMP4065S-7-HXY product image
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HXY MOSFET DMP4065S-7-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMP4065S-7-HXY
LCSC Part #
C6285747
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 40V 5A SOT-23
Datasheetpdf iconHXY MOSFET DMP4065S-7-HXY
In-Stock: 510
510 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0653$ 0.65
100+$ 0.0519$ 5.19
300+$ 0.0452$ 13.56
3,000+$ 0.0378$ 113.40
6,000+$ 0.0338$ 202.80
9,000+$ 0.0318$ 286.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage40V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)73mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)600pF
Gate Charge(Qg)14nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The DMO4065S-7 utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage V DS = -40V, drain current I D = -5A
  • On-resistance R DS(ON) < 85mΩ at gate-source voltage V GS = -10V
  • On-resistance R DS(ON) < 120mΩ at gate-source voltage V GS = -4.5V

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • DC-DC converters