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Intel/Altera RC28F128P33B85B product image
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Intel/Altera RC28F128P33B85BRoHS

Manufacturer
Intel/Altera
MPN
RC28F128P33B85B
LCSC Part #
C6263588
Packaging
EASYBGA-64(8x10)
Customer #
Key Attributes
2.3V~3.6V 128Mbit 52MHz EASYBGA-64(8x10) Memory (ICs) RoHS
Datasheetpdf iconIntel/Altera RC28F128P33B85B
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.8209$ 3.82
200+$ 1.5253$ 305.06
500+$ 1.4744$ 737.20
1,000+$ 1.4497$ 1449.70
Standard Packaging2000/Full Bag
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerIntel/Altera
PackagingEASYBGA-64(8x10)
Voltage - Supply2.3V~3.6V
Memory Size128Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency52MHz
FeaturesAbsolute write protection;Hardware write protection;Power lock protection
Data Retention - TDR (Year)10 years
Page Programming Time (Tpp)125us
Interface-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

P33 is the latest generation of Numonyx StrataFlash memory devices. Offered in 64-Mbit up through 512-Mbit densities, the P33 flash memory device brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.

Features

AI Translation
  • High performance:
    • 85 ns initial access
    • 52MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode
    • 25 ns asynchronous-page read mode
    • 4-, 8-, 16-, and continuous-word burst mode
    • Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
    • 3.0 V buffered programming at 7 µs/byte (Typ)
  • Architecture:
    • Multi-Level Cell Technology: Highest Density at Lowest Cost
    • Asymmetrically-blocked architecture
    • Four 32-KByte parameter blocks: top or bottom configuration
    • 128-KByte main blocks
  • Voltage and Power:
    • VCC (core) voltage: 2.3 V – 3.6 V
    • VCCQ (I/O) voltage: 2.3 V - 3.6 V
    • Standby current: 35µA (Typ) for 64-Mbit
    • 4-Word synchronous read current: 16 mA (Typ) at 52MHz
  • Quality and Reliability
    • Operating temperature: -40 ℃ to +85 ℃
    • Minimum 100,000 erase cycles per block
    • ETOX VIII process technology
  • Security:
    • One-Time Programmable Registers:
      • 64 unique factory device identifier bits
      • 2112 user-programmable OTP bits
    • Selectable OTP space in Main Array:
      • Four pre-defined 128-KByte blocks (top or bottom configuration).
      • Up to Full Array OTP Lockout
    • Absolute write protection: VPP=VSS
    • Power-transition erase/program lockout
    • Individual zero-latency block locking
    • Individual block lock-down capability
  • Software:
    • 20 µs (Typ) program suspend
    • 20 µs (Typ) erase suspend
    • Numonyx Flash Data Integrator optimized
    • Basic Command Set and Extended Command Set compatible
    • Common Flash Interface capable
  • Density and Packaging
    • 56-Lead TSOP package (64, 128, 256, 512- Mbit)
    • 64-Ball Numonyx Easy BGA package (64, 128, 256, 512-Mbit)
    • Numonyx QUAD + SCSP (64, 128, 256, 512-Mbit)
    • 16-bit wide data bus