LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
MICROCHIP TC7920K6-G product image
  • TC7920K6-G thumbnail 1
  • TC7920K6-G thumbnail 2
  • TC7920K6-G thumbnail 3
  • Pinout
  • Footprint
Images for reference only

MICROCHIP TC7920K6-GRoHS

Manufacturer
MICROCHIP
MPN
TC7920K6-G
LCSC Part #
C625020
Packaging
DFN-12-EP(4x4)
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 200V 2A DFN-12-EP(4x4)
Datasheetpdf iconMICROCHIP TC7920K6-G
In-Stock: 236
236 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 5.644$ 5.64
10+$ 4.973$ 49.73
30+$ 4.575$ 137.25
100+$ 4.1721$ 417.21
500+$ 3.9853$ 1992.65
1,000+$ 3.9024$ 3902.40
Standard Packaging3300/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerMICROCHIP
PackagingDFN-12-EP(4x4)
Current - Continuous Drain(Id)2A
RDS(on)10Ω@10V;12Ω@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage200V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)52pF;54pF
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)6.9pF;7.5pF
Report an ErrorShow similar products (0) >

Introduction

AI Translation

The Supertex TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gateclamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.

Features

AI Translation
  • High voltage Vertical DMOS technology
  • Integrated drain output high voltage diodes
  • Integrated gate-to-source resistor
  • Integrated gate-to-source Zener diode
  • Low threshold, Low on-resistance
  • Low input & output capacitance
  • Fast switching speeds
  • Electrically isolated N- and P-MOSFET pairs

Applications

AI Translation
  • High voltage pulsers
  • Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers
  • Logic level interfaces