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MICROCHIP TC6320K6-G product image
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MICROCHIP TC6320K6-GRoHS

Manufacturer
MICROCHIP
MPN
TC6320K6-G
LCSC Part #
C624991
Packaging
DFN-8-EP(4x4)
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 200V DFN-8-EP(4x4)
Datasheetpdf iconMICROCHIP TC6320K6-G
In-Stock: 28
28 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.8163$ 3.82
10+$ 3.337$ 33.37
30+$ 3.0527$ 91.58
100+$ 2.7652$ 276.52
500+$ 2.6319$ 1315.95
1,000+$ 2.5718$ 2571.80
Standard Packaging3300/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerMICROCHIP
PackagingDFN-8-EP(4x4)
Current - Continuous Drain(Id)2A
RDS(on)7Ω@10V;8Ω@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage200V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)23pF;30pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)110pF;200pF
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)60pF;55pF
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Introduction

AI Translation

The TC6320 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead SOIC and DFN packages. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.

Features

AI Translation
  • Integrated Gate-to-source Resistor
  • Integrated Gate-to-source Zener Diode
  • Low Threshold
  • Low On-resistance
  • Low Input Capacitance
  • Fast Switching Speeds
  • Free from Secondary Breakdown
  • Low Input and Output Leakage
  • Independent Electrically Isolated N-channel and P-channel

Applications

AI Translation
  • High-voltage Pulsers
  • Amplifiers
  • Buffers
  • Piezoelectric Transducer Drivers
  • General Purpose Line Drivers
  • Logic-level Interfaces