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ST STB15810RoHS

Manufacturer
ST
MPN
STB15810
LCSC Part #
C620154
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 100V 110A D2PAK
Datasheetpdf iconST STB15810
In-Stock: 8,000
8,000 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2025$ 1.20
10+$ 1.0189$ 10.19
30+$ 0.9181$ 27.54
100+$ 0.806$ 80.60
500+$ 0.754$ 377.00
1,000+$ 0.7313$ 731.30
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingD2PAK
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.115nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

AI Translation
  • 100% avalanche tested
  • Ultra low on-resistance

Applications

AI Translation
  • Switching applications