onsemi FDS8984
| Manufacturer | |
| MPN | FDS8984 |
| LCSC Part # | C61023 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 7A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 23mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 635pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
AI Translation
- Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
- Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
- Low gate charge
- 100% RG tested
- RoHS Compliant
Applications
AI Translation
- DC-DC conversion
In-Stock: 249
249 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5396 | $ 0.54 |
| 10+ | $ 0.4294 | $ 4.29 |
| 30+ | $ 0.3743 | $ 11.23 |
| 100+ | $ 0.3192 | $ 31.92 |
| 500+ | $ 0.2868 | $ 143.40 |
| 1,000+ | $ 0.2706 | $ 270.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 23mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 635pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
AI Translation
- Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
- Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
- Low gate charge
- 100% RG tested
- RoHS Compliant
Applications
AI Translation
- DC-DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



