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onsemi FGH40T65SHD-F155RoHS

Manufacturer
onsemi
MPN
FGH40T65SHD-F155
LCSC Part #
C606125
Packaging
TO-247-G03
Customer #
Key Attributes
650V,40A Field Stop Trench IGBT
Datasheetpdf icononsemi FGH40T65SHD-F155

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-247-G03
Td(off)65.6ns
Pd - Power Dissipation268W
Operating Temperature-55℃~+175℃
Td(on)19.2ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)23pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@40mA
Vce Saturation(VCE(sat))2.1V@40A,15V
Reverse Recovery Time(trr)31.8ns
Switching Energy(Eoff)297uJ
Turn-On Energy (Eon)1.01mJ
Input Capacitance(Cies)1.995nF
Gate Charge(Qg)72.2nC@15V
Output Capacitance(Coes)70pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Using novel field stop IGBT technology, new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

AI Translation
  • Maximum Junction Temperature T_J = 175℃
  • Positive Temperature Co - efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: V_{CE(sat)} = 1.6V (Typ.) <10↑ 100% of the Parts Tested for I_LM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

Applications

AI Translation
  • Solar Inverter
  • UPS
  • Welder
  • Telecom
  • ESS
  • PFC
In-Stock: 893
893 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8316$ 1.1723$ 1.17
10+$ 1.5649$ 1.0016$ 10.02
30+$ 1.3984$ 0.8950$ 26.85
90+$ 1.227$ 0.7853$ 70.68
510+$ 1.151$ 0.7367$ 375.72
990+$ 1.1171$ 0.7150$ 707.85
Standard Packaging30/Full Tube
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