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onsemi FDMS86322 product image
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onsemi FDMS86322RoHS

Manufacturer
onsemi
MPN
FDMS86322
LCSC Part #
C606111
Packaging
Power56-8
Customer #
Key Attributes
MOSFET N-CH 80V 60A Power56-8
Datasheetpdf icononsemi FDMS86322
In-Stock: 160
160 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8591$ 1.86
10+$ 1.5774$ 15.77
30+$ 1.4019$ 42.06
100+$ 1.2217$ 122.17
500+$ 1.1396$ 569.80
1,000+$ 1.1058$ 1105.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower56-8
Drain to Source Voltage80V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)7.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=7.65 mΩ at VGS = 10 Vs , ID = 13 A
  • Max rDS(on)=12 mΩ at VGS = 6 V; , ID = 7.2 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • DC-DC Conversion