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onsemi FDMS86310RoHS

Manufacturer
MPN
FDMS86310
LCSC Part #
C606110
Packaging
Power-56-8
Customer #
Key Attributes
MOSFET N-CH 80V 50A Power-56-8
Datasheetpdf icononsemi FDMS86310
In-Stock: 470
470 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.5536$ 2.55
10+$ 2.1647$ 21.65
30+$ 1.9205$ 57.62
100+$ 1.6699$ 166.99
500+$ 1.5576$ 778.80
1,000+$ 1.5088$ 1508.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56-8
Drain to Source Voltage80V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.29nF
Gate Charge(Qg)-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is specifically designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.

Features

AI Translation
  • Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
  • Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
  • Advanced package-silicon combination for low rDS(on) and high efficiency
  • Next-generation enhanced body diode technology designed for soft recovery
  • MSL1 robust package design
  • 100% UII tested
  • RoHS compliant

Applications

AI Translation
  • Main Switch - Synchronous Rectifier - Motor Switch