onsemi FDMS86310
| Manufacturer | |
| MPN | FDMS86310 |
| LCSC Part # | C606110 |
| Packaging | Power-56-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 50A Power-56-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.29nF | |
| Gate Charge(Qg) | - |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is specifically designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Features
AI Translation
- Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
- Advanced package-silicon combination for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology designed for soft recovery
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
Applications
AI Translation
- Main Switch - Synchronous Rectifier - Motor Switch
In-Stock: 470
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.5536 | $ 2.55 |
| 10+ | $ 2.1647 | $ 21.65 |
| 30+ | $ 1.9205 | $ 57.62 |
| 100+ | $ 1.6699 | $ 166.99 |
| 500+ | $ 1.5576 | $ 778.80 |
| 1,000+ | $ 1.5088 | $ 1508.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.29nF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is specifically designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Features
AI Translation
- Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
- Advanced package-silicon combination for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology designed for soft recovery
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
Applications
AI Translation
- Main Switch - Synchronous Rectifier - Motor Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



