onsemi FDMS86182
| Manufacturer | |
| MPN | FDMS86182 |
| LCSC Part # | C606107 |
| Packaging | Power56-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 78A Power56-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.105nF | |
| Current - Continuous Drain(Id) | 78A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.88nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=7.2 mΩ at VGS=10 V, ID=28 A
- Max rDS(on)=19.5 mΩ at VGS=6 V, ID=14 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar Power
In-Stock: 1,022
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2391 | $ 1.24 |
| 10+ | $ 1.0255 | $ 10.26 |
| 30+ | $ 0.9081 | $ 27.24 |
| 100+ | $ 0.7744 | $ 77.44 |
| 500+ | $ 0.7157 | $ 357.85 |
| 1,000+ | $ 0.688 | $ 688.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.105nF | |
| Current - Continuous Drain(Id) | 78A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.88nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=7.2 mΩ at VGS=10 V, ID=28 A
- Max rDS(on)=19.5 mΩ at VGS=6 V, ID=14 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar Power
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



