onsemi FDMC6679AZ
| Manufacturer | |
| MPN | FDMC6679AZ |
| LCSC Part # | C606102 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 20A WDFN-8(3.3x3.3) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 41W | |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.97nF | |
| Gate Charge(Qg) | 91nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Features
AI Translation
- Max rDS(on)=10 mΩ at VGS=-10 Vz, ID=-11.5 A
- Max rDS(on)=18 mΩ at VGS=-4.5 V, ID=-8.5 A
- HBM ESD Protection Level of 8 kV Typical
- Extended VGSS range (-25 V) for Battery Applications
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and Halide Free
Applications
AI Translation
- Load Switch in Notebook and Server
- Notebook Battery Pack Power Management
In-Stock: 123
123 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4962 | $ 0.50 |
| 10+ | $ 0.4865 | $ 4.87 |
| 30+ | $ 0.48 | $ 14.40 |
| 100+ | $ 0.4735 | $ 47.35 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 41W | |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.97nF | |
| Gate Charge(Qg) | 91nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Features
AI Translation
- Max rDS(on)=10 mΩ at VGS=-10 Vz, ID=-11.5 A
- Max rDS(on)=18 mΩ at VGS=-4.5 V, ID=-8.5 A
- HBM ESD Protection Level of 8 kV Typical
- Extended VGSS range (-25 V) for Battery Applications
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and Halide Free
Applications
AI Translation
- Load Switch in Notebook and Server
- Notebook Battery Pack Power Management
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



