ST STP60NF06
| Manufacturer | |
| MPN | STP60NF06 |
| LCSC Part # | C60610 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 60A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.66nF | |
| Gate Charge(Qg) | 73nC@30V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET series realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high - efficiency isolated DC - DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
In-Stock: 6
6 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0521 | $ 1.05 |
| 10+ | $ 0.8648 | $ 8.65 |
| 50+ | $ 0.7606 | $ 38.03 |
| 100+ | $ 0.645 | $ 64.50 |
| 500+ | $ 0.5929 | $ 296.45 |
| 1,000+ | $ 0.5701 | $ 570.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.66nF | |
| Gate Charge(Qg) | 73nC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET series realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high - efficiency isolated DC - DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



