ADI HMC908ALC5

A compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase/ quadrature (I/Q) downconverter in a leadless, RoHS compliant ceramic leadless chip carrier. This device provides a small signal conversion gain of 11 dB with a noise figure of 2 dB and 25 dB of image rejection at 100 MHz. Utilizes a low noise amplifier (LNA) followed by an image rejection mixer that is driven by a local oscillator (LO) buffer amplifier. The image rejection mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90° hybrid is needed to select the required sideband. It is a much smaller alternative to hybrid style image rejection mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.

• Conversion gain: 11 dB (typical) at |F₀UT = 1000 MHz
• Image rejection: 25 dB (typical) at IFour = 100 MHz
• LO to RF isolation: 46 dB (typical)
• LO to IF isolation: 26 dB (typical)
• IF output frequency: dc to 3.5 GHz
• 32-lead, 4.9 mm × 4.9 mm ceramic leadless chip carrier

• Point to point radios
• Point to multipoint radios and very small aperture terminals (VSATs)
• Test equipment and sensors