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onsemi FDMS86101A product image
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onsemi FDMS86101ARoHS

Manufacturer
onsemi
MPN
FDMS86101A
LCSC Part #
C605041
Packaging
Power56-8
Customer #
Key Attributes
MOSFET N-CH 100V 60A Power56-8
Datasheetpdf icononsemi FDMS86101A
In-Stock: 1,221
1,221 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.8413$ 2.84
10+$ 2.3588$ 23.59
30+$ 2.073$ 62.19
100+$ 1.7841$ 178.41
500+$ 1.6504$ 825.20
1,000+$ 1.5905$ 1590.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower56-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.12nF
Gate Charge(Qg)58nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using the advanced PowerTrench® process with integrated shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Shielded Gate MOSFET technology
  • Maximum rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
  • Maximum rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIS tested
  • 100% Rg tested
  • RoHS compliant

Applications

AI Translation
  • DC-DC conversion