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onsemi FCB260N65S3RoHS

Manufacturer
onsemi
MPN
FCB260N65S3
LCSC Part #
C604983
Packaging
TO-263-2
Customer #
Key Attributes
MOSFET N-CH 650V 12A TO-263-2
Datasheetpdf icononsemi FCB260N65S3
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.4477$ 2.45
10+$ 2.0906$ 20.91
30+$ 1.8693$ 56.08
100+$ 1.6415$ 164.15
500+$ 1.5381$ 769.05
800+$ 1.4929$ 1194.32
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-263-2
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.01nF
Gate Charge(Qg)24nC@10V
Vgs±30V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher efficiency.

Features

AI Translation
  • 700 V (TJ = 150°C)
  • Typ. RDS(on) = 222 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 24 nC)
  • Low Effective Output Capacitance (Typ. C0ss(eff.) = 248 pF)
  • 100% Avalanche Tested
  • These Devices are Pb −Free and are RoHS Compliant

Applications

AI Translation
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • UPS / Solar