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onsemi NV25010DTHFT3G product image
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onsemi NV25010DTHFT3GRoHS

Manufacturer
MPN
NV25010DTHFT3G
LCSC Part #
C604512
Packaging
TSSOP-8
Customer #
Key Attributes
2.5V~5.5V 1Kbit 10MHz SPI TSSOP-8 Memory (ICs) RoHS
Datasheetpdf icononsemi NV25010DTHFT3G
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6479$ 0.65
10+$ 0.5229$ 5.23
30+$ 0.4612$ 13.84
100+$ 0.398$ 39.80
500+$ 0.361$ 180.50
1,000+$ 0.3425$ 342.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufactureronsemi
PackagingTSSOP-8
Voltage - Supply2.5V~5.5V
Memory Size1Kbit
Operating temperature-40℃~+150℃
Clock Frequency10MHz
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Built-in write enable latch (WEL);Software write protection function
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)4ms
Write Cycle Endurance4,000,000 Cycles
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NV25010, NV25020 and NV25040 are EEPROM Serial 1/2/4−Kb SPI Automotive Grade 0 devices internally organized as 128x8, 256x8 and 512x8 bits. They feature a 16−byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The devices are enabled through a Chip Select (CS (overline)) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV250x0 device. The device features software and hardware write protection, including partial as well as full array protection. Byte Level On−Chip ECC (Error Correction Code) makes the device suitable for high reliability applications. The device offers an additional Identification Page which can be permanently write protected.

Features

AI Translation
  • Automotive AEC−Q100 Grade 0 (-40℃ to +150℃) Qualified
  • 2.5 V to 5.5 V Supply Voltage Range
  • 10 MHz SPI Compatible
  • SPI Modes (0,0) & (1,1)
  • 16−byte Page Write Buffer
  • Self−timed Write Cycle
  • Hardware and Software Protection
  • Additional Identification Page with Permanent Write Protection
  • NV Prefix for Automotive and Other Applications Requiring Site and Change Control
  • Block Write Protection − Protect 1/4, 1/2 or Entire EEPROM Array
  • Low Power CMOS Technology
  • Program/Erase Cycles:
    • 4,000,000 at 25℃
    • 1,200,000 at +85℃
    • 600,000 at +125℃
    • 300,000 at +150℃
  • 200 Year Data Retention
  • SOIC and TSSOP 8−lead Packages
  • This Device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant