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EDA ModelsEasyEDA
onsemi NTMFS6H800NT1G
| Manufacturer | |
| MPN | NTMFS6H800NT1G |
| LCSC Part # | C604456 |
| Packaging | DFN5(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 203A DFN5(5x6) |
| Datasheet |  onsemi NTMFS6H800NT1G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN5(5x6) | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 203A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.53nF | |
| Gate Charge(Qg) | 85nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
GT52N10D5 adopts advanced trench technology, delivering excellent on-state drain-source resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb-Free and are RoHS Compliant
Applications
AI Translation
- Power switches
- DC/DC converters
In-Stock: 33
33 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.137 | $ 3.14 |
| 10+ | $ 2.6622 | $ 26.62 |
| 30+ | $ 2.3661 | $ 70.98 |
| 100+ | $ 2.0619 | $ 206.19 |
| 500+ | $ 1.925 | $ 962.50 |
| 1,500+ | $ 1.8655 | $ 2798.25 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN5(5x6) | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 203A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.53nF | |
| Gate Charge(Qg) | 85nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
GT52N10D5 adopts advanced trench technology, delivering excellent on-state drain-source resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb-Free and are RoHS Compliant
Applications
AI Translation
- Power switches
- DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |