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onsemi NTMFS5C673NLT1G
| Manufacturer | |
| MPN | NTMFS5C673NLT1G |
| LCSC Part # | C604444 |
| Packaging | DFN-5(4.9x5.9) |
| Customer # | |
| Key Attributes | 60V 50A 2V 46W 9.2mΩ@10V 1 N-channel DFN-5(4.9x5.9) Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi NTMFS5C673NLT1G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(4.9x5.9) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 9.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This power MOSFET is manufactured using Maple Semi's advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.
Features
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized switching losses
- Lead-free, RoHS compliant
Applications
- High-efficiency switch-mode power supply
- Active power factor correction based on half-bridge topology
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4818 | $ 0.48 |
| 10+ | $ 0.3858 | $ 3.86 |
| 30+ | $ 0.3451 | $ 10.35 |
| 100+ | $ 0.2946 | $ 29.46 |
| 500+ | $ 0.2718 | $ 135.90 |
| 1,500+ | $ 0.2588 | $ 388.20 |
Standard Packaging1500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(4.9x5.9) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 46W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 9.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This power MOSFET is manufactured using Maple Semi's advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.
Features
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized switching losses
- Lead-free, RoHS compliant
Applications
- High-efficiency switch-mode power supply
- Active power factor correction based on half-bridge topology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |