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onsemi NST65010MW6T1GRoHS

Manufacturer
onsemi
MPN
NST65010MW6T1G
LCSC Part #
C604345
Packaging
SOT-363
Customer #
Key Attributes
TRANS PNP 65V 100mA SOT-363
Datasheetpdf icononsemi NST65010MW6T1G
In-Stock: 195
195 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1192$ 0.60
50+$ 0.1166$ 5.83
150+$ 0.1149$ 17.24
500+$ 0.1132$ 56.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff15nA
DC Current Gain150
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation380mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))300mV
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Complementary NPN equivalent NST65011MW6T1G is available.

Features

AI Translation
  • Current Gain Matching to 10%
  • Base−Emitter Voltage Matched to ≤2 mV
  • Drop−In Replacement for Standard Device
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

AI Translation
  • Current Mirrors
  • Differential, Sense and Balanced Amplifiers
  • Mixers
  • Detectors and Limiters