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onsemi NCV57000DWR2GRoHS

Manufacturer
MPN
NCV57000DWR2G
LCSC Part #
C603964
Packaging
SOIC-16-300mil
Customer #
Key Attributes
Isolated High Current IGBT Gate Driver
Datasheetpdf icononsemi NCV57000DWR2G

Products Specifications

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TypeDescription
CategoryIsolators/Isolators - Gate Drivers
Manufactureronsemi
PackagingSOIC-16-300mil
Driven Configuration-
FeaturesSaturation fault detection;Miller clamp protection
Operating Temperature-40℃~+125℃@(Ta)
Input Logic Level - High2.31V~5V
Current - Output High(IOH)4A
Rise Time10ns
Voltage - Supply3.3V~5V;13.5V~24V
Fall Time15ns
CMTI(kV/us)100kV/us
Number of Channels1
Current - Output Low(IOL)6A
Quiescent Current1000uA
Propagation Delay(tpd)90ns;90ns
Load TypeIGBT
Isolation Voltage(Vrms)5000V
Input Logic Level - Low0V~1.5V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn−off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCV57000 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57000 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCV57000 is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

Features

AI Translation
  • High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages
  • Low Output Impedance for Enhanced IGBT Driving
  • Short Propagation Delays with Accurate Matching
  • Active Miller Clamp to Prevent Spurious Gate Turn−on
  • DESAT Protection with Programmable Delay
  • Negative Voltage (Down to -9 V) Capability for DESAT
  • Soft Turn Off During IGBT Short Circuit
  • IGBT Gate Clamping During Short Circuit
  • IGBT Gate Active Pull Down
  • Tight UVLO Thresholds for Bias Flexibility
  • Wide Bias Voltage Range including Negative VEE2
  • 3.3 V to 5 V Input Supply Voltage
  • Designed for AEC−Q100 Certification
  • 5000 V Galvanic Isolation (to meet UL1577 Requirements)
  • 1200 V Working Voltage (per VDE0884−11 Requirements)
  • High Transient Immunity
  • High Electromagnetic Immunity
  • These Devices are Pb−Free, Halogen Free and are RoHS Compliant

Applications

AI Translation
  • Automotive Power Supplies
  • HEV/EV Powertrain
  • OBC
  • BSG
  • EV Charger
  • PTC Heater
In-Stock: 929
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QtyUnit PriceTotal Amount
1+$ 2.1185$ 2.12
10+$ 1.8957$ 18.96
30+$ 1.7595$ 52.79
100+$ 1.645$ 164.50
Standard Packaging1000/Full Reel
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