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onsemi AFGB40T65SQDNRoHS

Manufacturer
onsemi
MPN
AFGB40T65SQDN
LCSC Part #
C603141
Packaging
D2PAK
Customer #
Key Attributes
IGBT 650V 80A D2PAK
Datasheetpdf icononsemi AFGB40T65SQDN
In-Stock: 10
10 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.0683$ 4.07
10+$ 3.976$ 39.76
30+$ 3.914$ 117.42
100+$ 3.8519$ 385.19
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingD2PAK
Td(off)75.2ns
Pd - Power Dissipation238W
Td(on)17.6ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)9pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.6V@40mA
Vce Saturation(VCE(sat))2.1V@40A,15V
Reverse Recovery Time(trr)131ns
Switching Energy(Eoff)229uJ
Turn-On Energy (Eon)858uJ
Input Capacitance(Cies)2.495nF
Output Capacitance(Coes)50pF
Gate Charge(Qg)76nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Features

AI Translation
  • Maximum Junction Temperature: T_J = 175°C
  • High Speed Switching Series
  • V_CE(sat) = 1.6 V (Typ.) @ I_C = 40 A
  • 100% of the Part are Dynamically Tested
  • AEC−Q101 Qualified
  • These Devices are Pb−Free and are RoHS Compliant

Applications

AI Translation
  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV