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VISHAY SUP70040E-GE3RoHS

Manufacturer
MPN
SUP70040E-GE3
LCSC Part #
C5932057
Packaging
TO-220AB
Customer #
Key Attributes
100V 120A 4V 125W 4mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS
Datasheetpdf iconVISHAY SUP70040E-GE3
In-Stock: 10
10 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.5237$ 2.52
10+$ 2.4679$ 24.68
30+$ 2.4312$ 72.94
100+$ 2.3945$ 239.45
Standard Packaging500/Full Bag
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-220AB
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.1nF
Gate Charge(Qg)120nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging500
Sales UnitPiece

Introduction

AI Translation

This device is a N-channel Zener-protected power MOSFET developed using SuperMESH™ technology, implemented through optimization of the well-established stripe-based PowerMESH™ layout. In addition to significantly reducing on-resistance, the device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • ThunderFET Power MOSFET
  • Maximum junction temperature 175 °C
  • 100% Rg and UIS tested

Applications

AI Translation
  • Power Supply
  • Secondary Synchronous Rectification
  • DC/DC Converter
  • Power Tools
  • Motor Drive Switch
  • DC/AC Inverter
  • Battery Management