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onsemi 1N5822G
| Manufacturer | |
| MPN | 1N5822G |
| LCSC Part # | C59208 |
| Packaging | DO-201AD |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 40V DO-201AD |
| Datasheet |  onsemi 1N5822G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 2mA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
AI Translation
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
- Shipped in plastic bags, 500 per bag
- Available in Tape and Reel, 1500 per reel, by adding a "RL" suffix to the part number
- Pb-Free Packages are Available
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5887 | $ 0.59 |
| 10+ | $ 0.4706 | $ 4.71 |
| 30+ | $ 0.4108 | $ 12.32 |
| 100+ | $ 0.3511 | $ 35.11 |
| 500+ | $ 0.3158 | $ 157.90 |
| 1,000+ | $ 0.299 | $ 299.00 |
Standard Packaging500/Full Bag | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 2mA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
AI Translation
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
- Shipped in plastic bags, 500 per bag
- Available in Tape and Reel, 1500 per reel, by adding a "RL" suffix to the part number
- Pb-Free Packages are Available
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |