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ST STP12NK80ZRoHS

Manufacturer
ST
MPN
STP12NK80Z
LCSC Part #
C5887433
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 800V 10.5A TO-220
Datasheetpdf iconST STP12NK80Z
In-Stock: 61
61 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.8364$ 2.84
10+$ 2.3788$ 23.79
50+$ 2.0932$ 104.66
100+$ 1.7996$ 179.96
500+$ 1.6681$ 834.05
1,000+$ 1.6097$ 1609.70
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage800V
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.62nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • Improved esd capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing reliability

Applications

AI Translation
  • Switching applications