VBsemi Elec IRF640PBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF640PBF-VB |
| LCSC Part # | C5878802 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 30A TO-220AB |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175°C junction temperature
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant with directive 2002/95/EC
Applications
AI Translation
- Primary-side switch
- N-channel MOSFET
In-Stock: 110
110 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9831$ 0.8357 | $ 0.84 |
| 10+ | $ 0.7984$ 0.6787 | $ 6.79 |
| 50+ | $ 0.7068$ 0.6008 | $ 30.04 |
| 100+ | $ 0.6152$ 0.5230 | $ 52.30 |
| 500+ | $ 0.5606$ 0.4766 | $ 238.30 |
| 1,000+ | $ 0.5333$ 0.4534 | $ 453.40 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 175°C junction temperature
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant with directive 2002/95/EC
Applications
AI Translation
- Primary-side switch
- N-channel MOSFET
C5878802 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



