SAMSUNG K4T1G164QJ-BCE7

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-84
Refresh Current	-
Voltage - Supply	1.7V~1.9V
Memory Size	1Gbit
Operating temperature	-40℃~+90℃
Clock Frequency	533MHz
Features	Auto self-refresh;Auto precharge function;Data mask function;Dynamic on-chip termination
Memory Format	DDR2 SDRAM
Current - Supply	41mA

AI Translation

JEDEC standard V_DD = 1.8V ± 0.1V Power Supply
V_DDQ = 1.8V ± 0.1V
333MHz f_CK for 667Mb/sec/pin, 400MHz f_CK for 800Mb/sec/pin, 533MHz f_CK for 1066Mb/sec/pin
8 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6, 7
Programmable Additive Latency: 0, 1, 2, 3, 4, 5, 6
Write Latency(WL) = Read Latency(RL) - 1
Burst Length: 4, 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support - 50ohm ODT - High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than T_CASE 85℃, 3.9us at 85℃ < T_CASE ≤ 95℃
Support Industrial Temp (-40~90℃) - tREFI 7.8us at -40℃ ≤ TCASE ≤ 85℃ - tREFI 3.9us at 85℃ ≤ TCASE ≤ 95℃
All of products are Lead-Free, Halogen-Free, and RoHS compliant

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 3.238	$ 3.24
10+	$ 2.7434	$ 27.43
30+	$ 2.45	$ 73.50
100+	$ 2.1535	$ 215.35
500+	$ 2.0168	$ 1008.40
1,120+	$ 1.9539	$ 2188.37
Standard Packaging1120/Full Tray

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