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DIODES DMN2015UFDE-7RoHS

Manufacturer
DIODES
MPN
DMN2015UFDE-7
LCSC Part #
C581339
Packaging
UDFN2020-6-EP
Customer #
Key Attributes
20V 10.5A 1.1V 660mW 11.5mΩ@4.5V 1 N-channel UDFN2020-6-EP Single FETs, MOSFETs RoHS
Datasheetpdf iconDIODES DMN2015UFDE-7
In-Stock: 2,985
2,985 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1745$ 0.87
50+$ 0.1408$ 7.04
150+$ 0.1264$ 18.96
500+$ 0.1084$ 54.20
3,000+$ 0.0886$ 265.80
6,000+$ 0.0838$ 502.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUDFN2020-6-EP
Drain to Source Voltage20V
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation660mW
Reverse Transfer Capacitance (Crss@Vds)154pF
RDS(on)11.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.779nF
Gate Charge(Qg)19.7nC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 0.6mm thickness — suitable for thin applications
  • 4mm² PCB footprint
  • Low gate threshold voltage
  • Low on-resistance
  • Fully lead-free and fully RoHS compliant
  • Halogen and antimony-free, "Green" device

Applications

AI Translation
  • General-purpose interface switch
  • Power management function