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DIODES DMN2015UFDE-7

Manufacturer
DIODES
MPN
DMN2015UFDE-7
LCSC Part #
C581339
Packaging
UDFN2020-6-EP
Customer #
Key Attributes
660mW 20V 10.5A 11.5mΩ@4.5V 1 N-channel N-Channel UDFN2020-6-EP Single FETs, MOSFETs RoHS
DatasheetDIODES DMN2015UFDE-7
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUDFN2020-6-EP
Output Capacitance(Coss)175pF
Ciss-Input Capacitance1.779nF
Pd - Power Dissipation660mW
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)10.5A
Reverse Transfer Capacitance (Crss)154pF
RDS(on)11.5mΩ@4.5V
Number1 N-channel
Gate Charge(Qg)19.7nC@4.5V
Vgs±12V
Gate Threshold Voltage (Vgs(th))1.1V
TypeN-Channel
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Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 0.6mm thickness — suitable for thin applications
  • 4mm² PCB footprint
  • Low gate threshold voltage
  • Low on-resistance
  • Fully lead-free and fully RoHS compliant
  • Halogen and antimony-free, "Green" device

Applications

AI Translation
  • General-purpose interface switch
  • Power management function