ADI HMC637ALP5ETR

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mmx5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.

• P1dB output power: 29 dBm
• Gain: 13 dB
• Output IP3: 44 dBm
• 50 Ω matched input/output
• 32-lead, 5 mmx5 mm LFCSP package: 25 mm2

• Telecom infrastructure
• Microwave radio
• Very small aperture terminal (VSAT)
• Test instrumentation
• Fiber optics