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RENESAS AT25SF161B-SHB-TRoHS

Manufacturer
RENESAS
MPN
AT25SF161B-SHB-T
LCSC Part #
C5776772
Packaging
SOP-8-208mil
Customer #
Key Attributes
16-Mbit SPI Serial Flash Memory with Dual I/O and Quad I/O Support
Datasheetpdf iconRENESAS AT25SF161B-SHB-T
In-Stock: 49
49 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8511$ 0.85
10+$ 0.6907$ 6.91
30+$ 0.6097$ 18.29
100+$ 0.5303$ 53.03
500+$ 0.4827$ 241.35
1,000+$ 0.4573$ 457.30
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerRENESAS
PackagingSOP-8-208mil
Voltage - Supply2.7V~3.6V
Memory Size16Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency108MHz
FeaturesWrite enable latch;Hardware write protection;Software write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)220ms@(4KB)
Page Programming Time (Tpp)1.8ms
Standby Supply Current15uA
InterfaceSPI
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Features

AI Translation
  • Serial Peripheral Interface (SPI) Compatible - Supports SPI modes 0 and 3
  • Supports single input/output operations (1,1,1)
  • Supports dual input and dual output operations (1-1-2), (1-2-2), (0-2-2)
  • Supports quad input and quad output operations (1-1-4), (1-4-4), (0-4-4)
  • Continuous Read mode (with 8/16/32/64 bytes wrap)
  • optimized for XiP 16-Mbit Flash Memory
  • 108 MHz Maximum Operating Frequency
  • Two Supply Voltage Options Available: 2.7 V, 3.6 V, 2.5 V, 3.6 V
  • Serial Flash Discoverable Parameters (SFDP, JESD216B) support
  • OTP Memory
  • Three Protected Programmable Security Register Pages (Page size: 256 bytes)
  • 64-bit factory programmable UID register
  • Hardware Write Protection (WP pin)
  • Software Write protection (Programmable non-volatile control registers)
  • Program and Erase Suspend and Resume
  • Byte programming size: up to 256 bytes
  • Erase Size and Duration:
    • Uniform 4-kbyte Block Erase (50 ms typical)
    • Uniform 32-kbyte Block Erase (120 ms typical)
    • Uniform 64-kbyte Block Erase (200 ms typical)
    • Full Chip Erase (5.5 seconds typical)
  • Low Power Dissipation:
    • Standby Current (15 μA maximum)
    • Deep-Power-Down Current (1.5 μA maximum)
  • Endurance: 100,000 Program and Erase Cycles
  • Data Retention: 20 Years
  • Industrial Temperature Range (-40 °C to 85 °C)
  • Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options:
    • 8-lead SOIC (0.150" Narrow and 0.208" Wide)
    • 8-pad Ultra-Thin DFN (5 x 6 x 0.6 mm)
    • 8-ball WLCSP (3 x 2 x 3 grid array)
    • Die Wafer Form