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Infineon IRFL014NTRPBFRoHS

Manufacturer
Infineon
MPN
IRFL014NTRPBF
LCSC Part #
C57685
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 55V 1.9A SOT-223
Datasheetpdf iconInfineon IRFL014NTRPBF
In-Stock: 3,593
3,593 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7372$ 0.74
10+$ 0.5849$ 5.85
30+$ 0.5201$ 15.60
100+$ 0.4391$ 43.91
500+$ 0.3435$ 171.75
1,000+$ 0.3208$ 320.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOT-223
Drain to Source Voltage55V
Current - Continuous Drain(Id)1.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF
Gate Charge(Qg)7nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFET MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Features

AI Translation
  • Surface Mount
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free