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VISHAY SIDR626EP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIDR626EP-T1-RE3
LCSC Part #
C5753898
Packaging
PowerPAKSO-8DC
Customer #
Key Attributes
MOSFET N-CH 60V 50.8A 227A PowerPAKSO-8DC
Datasheetpdf iconVISHAY SIDR626EP-T1-RE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 45.8131$ 45.81
10+$ 45.7447$ 457.45
30+$ 45.699$ 1370.97
100+$ 45.6534$ 4565.34
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8DC
Drain to Source Voltage60V
Output Capacitance(Coss)1.19nF
Current - Continuous Drain(Id)50.8A;227A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation7.5W;150W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)1.74mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.13nF
Gate Charge(Qg)102nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • Very low RDS - Qg figure of merit (FOM) RoHS
  • Tuned for the lowest RDS - Qoss FOM COAMPLAN
  • 100 % Rg and UIS tested FREE
  • Top side cooling feature provides additional venue for thermal transfer

Applications

AI Translation
  • Synchronous rectification
  • Primary side switch
  • DC/DC converter
  • Solar micro inverter
  • Motor drive switch
  • Battery and load switch
  • Industrial