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UMW IRFR9024NTR(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
IRFR9024NTR(UMW)
LCSC Part #
C5693006
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 60V 20A TO-252
Datasheetpdf iconUMW IRFR9024NTR(UMW)
In-Stock: 80
80 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1699$ 0.85
50+$ 0.1329$ 6.65
150+$ 0.1171$ 17.57
500+$ 0.0973$ 48.65
2,500+$ 0.0885$ 221.25
5,000+$ 0.0832$ 416.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)97.3pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)53mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.447nF
Gate Charge(Qg)9.86nC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This power MOSFET is designed to sustain high energy in avalanche and commutation modes. It is intended for low-voltage, high-speed switching applications in power supplies, converters, and motor drives — particularly suited for bridge circuits with stringent requirements on diode speed and commutation SOA — while providing additional safety margin against unexpected voltage transients.

Features

AI Translation
  • VDS(V) = -60V
  • ID = -12A (VGS = -10V)
  • RDS(ON) = 150mΩ (VGS = -10V)
  • Specified avalanche energy
  • Specified IDSS and VDS(ON) at high temperature
  • Designed for low-voltage, high-speed switching applications with high energy capability in avalanche and commutation modes