UMW FDC604P(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | FDC604P(UMW) |
| LCSC Part # | C5693004 |
| Packaging | SOT-23-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 6A SOT-23-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 132pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -40℃~+105℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1.31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF | |
| RDS(on) | 28mΩ@4.5V;53mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 830pF | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
FDC604P is a high cell density trench P-channel MOSFET offering excellent RDS(ON) and gate charge performance for most synchronous buck converter applications.
Features
AI Translation
- VDS = -20V
- ID = -6A (VGS = 10V)
- RDS(ON) < 28mΩ (VGS = 4.5V)
- RDS(ON) < 38mΩ (VGS = 2.5V)
In-Stock: 1,745
1,745 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1003 | $ 0.50 |
| 50+ | $ 0.079 | $ 3.95 |
| 150+ | $ 0.0684 | $ 10.26 |
| 500+ | $ 0.0605 | $ 30.25 |
| 3,000+ | $ 0.0541 | $ 162.30 |
| 6,000+ | $ 0.0509 | $ 305.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 132pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -40℃~+105℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1.31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF | |
| RDS(on) | 28mΩ@4.5V;53mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 830pF | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
FDC604P is a high cell density trench P-channel MOSFET offering excellent RDS(ON) and gate charge performance for most synchronous buck converter applications.
Features
AI Translation
- VDS = -20V
- ID = -6A (VGS = 10V)
- RDS(ON) < 28mΩ (VGS = 4.5V)
- RDS(ON) < 38mΩ (VGS = 2.5V)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
