JSMSEMI IRFB4321PBF
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRFB4321PBF |
| LCSC Part # | C5689128 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 50A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 154nC@160V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Proprietary novel planar technology
- R DS(ON) typical = 50 mΩ @ VGS = 10 V
- Low gate charge, minimizing switching losses
- Fast recovery body diode
Features
AI Translation
- Proprietary New Planar Technology
- RDS (ON), typ. = 50mΩ @ VGS = 10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Applications
AI Translation
- DC-DC Converters
- DC-AC Inverters for UPS
- SMPS and Motor controls
In-Stock: 556
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1607 | $ 1.16 |
| 10+ | $ 1.0633 | $ 10.63 |
| 50+ | $ 1.0015 | $ 50.08 |
| 100+ | $ 0.9381 | $ 93.81 |
| 500+ | $ 0.9088 | $ 454.40 |
| 1,000+ | $ 0.8964 | $ 896.40 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 154nC@160V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Proprietary novel planar technology
- R DS(ON) typical = 50 mΩ @ VGS = 10 V
- Low gate charge, minimizing switching losses
- Fast recovery body diode
Features
AI Translation
- Proprietary New Planar Technology
- RDS (ON), typ. = 50mΩ @ VGS = 10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Applications
AI Translation
- DC-DC Converters
- DC-AC Inverters for UPS
- SMPS and Motor controls
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



