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TI DRV8300UDRGER product image
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TI DRV8300UDRGERRoHS

Manufacturer
TI
MPN
DRV8300UDRGER
LCSC Part #
C5672503
Packaging
VQFN-24(4x4)
Customer #
Key Attributes
IC GATE DRVR VQFN-24(4x4)
Datasheetpdf iconTI DRV8300UDRGER
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.6582$ 1.66
200+$ 0.834$ 166.80
500+$ 0.8158$ 407.90
1,000+$ 0.8067$ 806.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingVQFN-24(4x4)
Input Logic Level - Low800mV
Rise Time10ns
Fall Time5ns
FeaturesUnder Voltage Protection
Current - Output High(IOH)750mA
Load TypeMOSFET
Quiescent Current800uA
Input Logic Level - High2V
Voltage - Supply5V~20V
Operating Temperature-40℃~+125℃
Driven ConfigurationThree Phase
Current - Output Low(IOL)1.5A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The DRV8300U is a 100V three-phase half-bridge gate driver capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD uses an integrated bootstrap diode and external capacitor to generate the correct gate drive voltage for the high-side MOSFETs. GVDD is used to generate the gate drive voltage for the low-side MOSFETs. The gate drive architecture supports peak source currents up to 750mA and peak sink currents up to 1.5A.

The phase pins SHx can withstand significant negative voltage transients, while the high-side gate driver supplies BSTx and GHx support higher positive voltage transients (absolute maximum voltage 125V), improving system robustness. Small propagation delays and delay-matching specifications minimize dead-time requirements, further improving efficiency. Undervoltage protection for both the low-side and high-side is provided through GVDD and BST undervoltage lockout.

Features

AI Translation
  • 100V three-phase half-bridge gate driver
  • Drives N-channel MOSFETs (NMOS)
  • Gate driver supply (GVDD): 5 - 20V
  • MOSFET supply (SHx) supports up to 100V
  • Integrated bootstrap diode (DRV8300UD device)
  • Supports inverting and non-inverting INLx inputs
  • Bootstrap gate drive architecture
  • 750mA source current
  • 1.5A sink current
  • Supports up to 15S battery-powered applications
  • Higher BSTUV (typical 8V) and GVDDUV (typical 7.6V) thresholds for standard MOSFET support
  • SHx pin low leakage current (<55µA)
  • Absolute maximum BSTx voltage up to 125V
  • SHx supports negative transients down to -22V
  • Built-in cross-conduction protection
  • Adjustable dead time via DT pin for QFN package variants
  • TSSOP package variant fixed insertion 200nS dead time
  • Supports 3.3V and 5V logic inputs, absolute maximum 20V
  • Typical propagation delay matching 4nS
  • Compact QFN and TSSOP packages
  • Efficient system design via power modules
  • Integrated protection features
  • BST undervoltage lockout (BSTUV)
  • GVDD undervoltage (GVDDUV)

Applications

AI Translation
  • E-bikes, e-scooters, and electric vehicles
  • Fans, pumps, and servo drives
  • BLDC motor modules and permanent magnet synchronous motors
  • Cordless garden tools, power tools, and lawn mowers
  • Cordless vacuum cleaners
  • Drones, robots, and RC toys
  • Industrial and logistics robots