MACOM MA4AGFCP910

M/A-COM Technology Solutions' MA4AGP907 and MA4AGFCP910 are aluminum gallium arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using an optimized process to achieve high device uniformity and extremely low parasitic effects. The resulting diodes feature an ultralow RC product (0.1 ps) and 2–3 ns switching characteristics. They are fully passivated with silicon nitride, with an additional polymer layer to prevent scratching. This protective coating guards against damage to the junction and anode air bridge during handling and assembly.

• Low series resistance
• Ultra-low capacitance
• Millimeter-wave switching and cutoff frequency
• 2 ns switching speed
• Drivable by buffered TTL
• Silicon nitride passivation
• Polyimide scratch protection
• RoHS compliant

The ultra-low capacitance of the MA4AGP907 and MA4AGFCP910 makes them ideal for RF switch and phase shifter applications in the millimeter-wave frequency range. These diodes are designed for pulsed or continuous wave applications requiring single-digit nanosecond switching speeds. The low capacitance of these diodes makes them well suited for microwave multi-throw switch assemblies, where the series capacitance of each "off" port can adversely load the input and degrade VSWR.