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DIODES DMN2008LFU-7RoHS

Manufacturer
DIODES
MPN
DMN2008LFU-7
LCSC Part #
C559578
Packaging
DFN2030-6B-EP
Customer #
Key Attributes
Dual N-Channel Enhancement Mode MOSFET
Datasheetpdf iconDIODES DMN2008LFU-7
In-Stock: 207
207 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7332$ 1.73
10+$ 1.4675$ 14.68
30+$ 1.3012$ 39.04
100+$ 1.1316$ 113.16
500+$ 1.055$ 527.50
1,000+$ 1.0207$ 1020.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingDFN2030-6B-EP
Current - Continuous Drain(Id)14.5A
RDS(on)4.7mΩ@4.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)106pF
Number2 N-Channel
Input Capacitance(Ciss)1.418nF
Gate Charge(Qg)42.3nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)323pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • Power Management Functions
  • Battery Pack
  • Load Switch