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Infineon BAT62E6327 product image
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Infineon BAT62E6327RoHS

Manufacturer
MPN
BAT62E6327
LCSC Part #
C5594985
Packaging
SOT-143
Customer #
Key Attributes
DIODE SCHOTTKY 40V SOT-143
Datasheetpdf iconInfineon BAT62E6327
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerInfineon
PackagingSOT-143
Operating Junction Temperature Range-
Voltage - DC Reverse (Vr) (Max)40V
Diode Configuration2 Independent
Voltage - Forward(Vf@If)1V@2mA
Reverse Leakage Current (Ir)10uA@40V
Non-Repetitive Peak Forward Surge Current-
Current - Rectified20mA

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz.

Applications

AI Translation
  • Wireless communication
  • Smart metering
  • Set top boxes
  • Mobile devices