Infineon BAT62E6327
| Manufacturer | |
| MPN | BAT62E6327 |
| LCSC Part # | C5594985 |
| Packaging | SOT-143 |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 40V SOT-143 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | SOT-143 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 2 Independent | |
| Voltage - Forward(Vf@If) | 1V@2mA | |
| Reverse Leakage Current (Ir) | 10uA@40V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 20mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz.
Applications
AI Translation
- Wireless communication
- Smart metering
- Set top boxes
- Mobile devices
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | SOT-143 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 2 Independent | |
| Voltage - Forward(Vf@If) | 1V@2mA | |
| Reverse Leakage Current (Ir) | 10uA@40V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 20mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz.
Applications
AI Translation
- Wireless communication
- Smart metering
- Set top boxes
- Mobile devices
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



