VBsemi Elec SPD30P06PG-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | SPD30P06PG-VB |
| LCSC Part # | C558281 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 35A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 46mΩ@10V;58mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for unclamped inductive switching (UIS)
- RoHS compliant per directive 2002/95/EC
- Drain connected to heatsink
- P-channel MOSFET
In-Stock: 71
71 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.651 | $ 0.65 |
| 10+ | $ 0.5288 | $ 5.29 |
| 30+ | $ 0.4684 | $ 14.05 |
| 100+ | $ 0.4081 | $ 40.81 |
| 500+ | $ 0.3462 | $ 173.10 |
| 1,000+ | $ 0.3271 | $ 327.10 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 46mΩ@10V;58mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for unclamped inductive switching (UIS)
- RoHS compliant per directive 2002/95/EC
- Drain connected to heatsink
- P-channel MOSFET
C558281 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



