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VBsemi Elec NTD5865NLT4G&-15-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NTD5865NLT4G&-15-VB |
| LCSC Part # | C558212 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 58A TO-252 |
| Datasheet |  VBsemi Elec NTD5865NLT4G&-15-VB |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- Material classification: RoHS compliant
- N-channel MOSFET
In-Stock: 50
50 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6873 | $ 0.69 |
| 10+ | $ 0.5635 | $ 5.64 |
| 30+ | $ 0.5016 | $ 15.05 |
| 100+ | $ 0.4398 | $ 43.98 |
| 500+ | $ 0.3551 | $ 177.55 |
| 1,000+ | $ 0.3355 | $ 335.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- Material classification: RoHS compliant
- N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |