VBsemi Elec NTD5865NL-1G-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NTD5865NL-1G-VB |
| LCSC Part # | C558211 |
| Packaging | TO-251 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 55A TO-251 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-251 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.65nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 80 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
In-Stock: 43
43 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5356$ 0.4553 | $ 0.46 |
| 10+ | $ 0.43$ 0.3655 | $ 3.66 |
| 30+ | $ 0.3772$ 0.3207 | $ 9.62 |
| 80+ | $ 0.3123$ 0.2655 | $ 21.24 |
| 480+ | $ 0.2807$ 0.2386 | $ 114.53 |
| 800+ | $ 0.2641$ 0.2245 | $ 179.60 |
Standard Packaging80/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-251 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.65nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 80 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



