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onsemi FDD86252
| Manufacturer | |
| MPN | FDD86252 |
| LCSC Part # | C556476 |
| Packaging | DPAK(TO-252) |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 27A DPAK(TO-252) |
| Datasheet |  onsemi FDD86252 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DPAK(TO-252) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 27A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 985pF | |
| Gate Charge(Qg) | 16nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using an advanced PowerTrench® process with integrated shield gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.
Features
AI Translation
- Shielded gate MOSFET technology
- Max r<sub>DS(on)</sub> = 52 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 5 A
- Max r<sub>DS(on)</sub> = 72 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 4 A
- 100% UIL tested
- RoHS compliant
Applications
AI Translation
- DC-DC Conversion
In-Stock: 256
256 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8957 | $ 0.90 |
| 10+ | $ 0.8762 | $ 8.76 |
| 30+ | $ 0.8632 | $ 25.90 |
| 100+ | $ 0.8501 | $ 85.01 |
| 104+ | $ 0.7769 | $ 80.80 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DPAK(TO-252) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 27A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 985pF | |
| Gate Charge(Qg) | 16nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using an advanced PowerTrench® process with integrated shield gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.
Features
AI Translation
- Shielded gate MOSFET technology
- Max r<sub>DS(on)</sub> = 52 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 5 A
- Max r<sub>DS(on)</sub> = 72 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 4 A
- 100% UIL tested
- RoHS compliant
Applications
AI Translation
- DC-DC Conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |