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onsemi FDS86267PRoHS

Manufacturer
onsemi
MPN
FDS86267P
LCSC Part #
C556463
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 150V 2.2A SO-8
Datasheetpdf icononsemi FDS86267P
In-Stock: 95
95 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.3698$ 1.37
10+$ 1.138$ 11.38
30+$ 1.0108$ 30.32
100+$ 0.866$ 86.60
500+$ 0.8032$ 401.60
1,000+$ 0.7742$ 774.20
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage150V
Output Capacitance(Coss)54pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)255mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.13nF
Gate Charge(Qg)16nC@10V
Vgs±25V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-Channel MOSFET is produced using advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Very Low rDS(on) Mid Voltage P -channel Silicon Technology Optimised for Low Ω2g
  • This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • Active Clamp Switch
  • Load Switch